| PART |
Description |
Maker |
| GR160MT12J |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| C2M1000170D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C2M0080120D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C3M0120100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| C2M1000170D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
| SCT3080KL SCT3080KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| CDBJSC10650-G |
Silicon Carbide Power Schottky Diode
|
Comchip Technology
|
| GB10SLT12-252 GB10SLT12-252-18 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SLT12-252 |
Silicon Carbide Power Schottky Diode
|
List of Unclassifed Manufacturers
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